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| MITSUBISHI SEMICONDUCTOR M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 COM COMMON FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = -20 to +75C) 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 10.5K INPUT 5K 3K GND The seven circuits share the COM and GND. FUNCTION The M54526P and M54526FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. The M54526FP is enclosed in a molded small flat package, enabling space-saving design. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 Unit V mA V mA V W C C Aug. 1999 Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board 50 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 MITSUBISHI SEMICONDUCTOR M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Limits min 0 0 0 8 0 typ -- -- -- -- -- max 50 400 Unit V IC mA 200 25 0.5 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II VF IR hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A Limits min 50 -- -- -- -- -- -- 1000 typ+ -- 1.3 0.95 0.9 2.8 1.5 -- 2500 max -- 2.4 1.6 1.5 4.1 2.4 100 -- Unit V V mA V A -- Collector-emitter breakdown voltage VI = 8V, IC = 400mA Collector-emitter saturation voltage VI = 8V, IC = 200mA Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor VI = 10V VI = 25V IF = 400mA VR = 50V VCE = 4V, IC = 350mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 12 230 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device OPEN PG 50 CL OUTPUT VO TIMING DIAGRAM 50% RL 50% INPUT OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 VI = 8V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54526P Collector current Ic (mA) 400 300 1.0 M54526FP 200 Ta = 25C 0.5 100 Ta = 75C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54526P) 500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54526P) 500 Collector current Ic (mA) Collector current Ic (mA) 400 300 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54526FP) 500 500 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54526FP) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 300 100 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 100 *Ta = 75C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics 104 7 VCE = 4V Grounded Emitter Transfer Characteristics 500 DC amplification factor hFE 5 3 2 Ta = 75C Collector current Ic (mA) 400 300 103 7 5 3 2 Ta = -20C Ta = 25C 200 Ta = 75C Ta = 25C Ta = -20C 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 4 500 Clamping Diode Characteristics Forward bias current IF (mA) Input current II (mA) 3 Ta = -20C 400 300 2 Ta = 25C Ta = 75C 200 Ta = 25C 1 100 Ta = 75C Ta = -20C 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Aug. 1999 |
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